• DocumentCode
    1396301
  • Title

    Design Requirements for Steeply Switching Logic Devices

  • Author

    Kam, Hei ; Liu, Tsu-Jae King ; Alon, Elad

  • Author_Institution
    Univ. of California at Berkeley, Berkeley, CA, USA
  • Volume
    59
  • Issue
    2
  • fYear
    2012
  • Firstpage
    326
  • Lastpage
    334
  • Abstract
    Many steeply switching logic devices have recently been proposed to overcome the energy efficiency limitations of CMOS technology. In this paper, circuit-level energy-performance analysis is used to derive the design requirements for these alternative switching devices. Using a simple analytical approach, this paper shows that the optimal Ion/Ioff and Edyn/Eleak ratios are set only by circuit-level parameters as well as the device transfer characteristic off-state Soff, on -state Son, and effective Seff inverse slopes. For a wide variety of switching device characteristics and circuit parameters, the optimal Edyn/Eleak ratio is approximately (K/2)(Seff/Soff) - 0.56(Son/Soff) - 0.56, where K ranges from 6.23 to 11.9. Based upon this theoretical framework, simple requirements for Soff, Son, and Seff are established in order for an alternative switching device to be more energy efficient than a MOSFET. The results reemphasize that merely focusing on achieving the steepest local inverse slope S is insufficient, since energy dissipation is set mainly by Seff and not by S. Finally, the general shape of the energy-delay curve is also set by these inverse slopes, with its steepness directly proportional to Son/Soff. This analytical approach provides a simple method to assess the promise of any new device technology in potentially overcoming the energy efficiency limitations of CMOS technology.
  • Keywords
    CMOS logic circuits; integrated circuit design; logic design; CMOS technology; MOSFET; circuit-level energy-performance analysis; circuit-level parameters; design requirements; device transfer characteristic; energy efficiency limitations; inverse slopes; off-state characteristic; on-state characteristic; steeply-switching logic devices; switching device characteristics; CMOS integrated circuits; Delay; Logic gates; MOSFET circuits; Performance evaluation; Switches; Threshold voltage; 60 mV/dec; Low power electronics; subthreshold slope; transistor;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2175484
  • Filename
    6101566