• DocumentCode
    1397906
  • Title

    A 10 Gb/s AlGaAs/GaAs HBT high power fully differential limiting distributed amplifier for III-V Mach-Zehnder modulator

  • Author

    Wong, Thomas Y K ; Freundorfer, A.P. ; Beggs, Bruce C. ; Sitch, John E.

  • Author_Institution
    Adv. Technol. Lab., Nortel Technol., Ottawa, Ont., Canada
  • Volume
    31
  • Issue
    10
  • fYear
    1996
  • fDate
    10/1/1996 12:00:00 AM
  • Firstpage
    1388
  • Lastpage
    1393
  • Abstract
    High power, high frequency linear distributed amplifiers are available commercially which provide high power single-ended drive capability from a single-ended source. The signal source can be either analog or digital. Such amplifiers must have stringent gain and phase response requirement over a wide bandwidth in order to maintain good eye quality of the signal. A limiting amplifier, with less stringent bandwidth requirement than analog amplifiers, can be used to amplify pure digital signal source. The purpose of this paper is to present a high power, fully differential limiting distributed amplifier operating at 10 Gb/s. The amplifier has been fabricated with both AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistor (HBT) processes. The amplifier is designed to drive any 50 Ω system. In particular, this amplifier is intended to drive a III-V Mach-Zehnder modulator
  • Keywords
    III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; bipolar analogue integrated circuits; differential amplifiers; distributed amplifiers; gallium arsenide; optical communication equipment; optical modulation; 10 Gbit/s; 50 ohm; AlGaAs-GaAs; HBT processes; III-V semiconductors; Mach-Zehnder modulator; eye quality; fully differential limiting distributed amplifier; gain requirement; lightwave communication; phase response requirement; single-ended drive capability; Bandwidth; Broadband amplifiers; Distributed amplifiers; Drives; Frequency; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Optical amplifiers; Phase modulation;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.540045
  • Filename
    540045