Threshold-voltage control for GaAs MESFETs using the thermal-wave technique

Author

Uchitomi, Naotaka ; Toyoda, Nobuyuki ; Nii, R.

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

9

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

208

Lastpage

210

Abstract

Thermal-wave measurements are a very effective tool in the control of the threshold voltage V/sub th/ of GaAs MESFETS with a very thin (100-nm) active layer. A linear correlation is given between the thermal-wave signals and implantation into semi-insulating (SI) undoped LEC-grown GaAs substrates at 50 keV. In addition, the relation between the threshold voltage of GaAs MESFETs fabricated by direct Si/sup +/ implantation at 50 keV and dosage was experimentally obtained. Using these two results, the threshold voltage is easily predicted just after implantation by thermal-wave measurements and adjusted to the desired value by additional implantation.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; voltage control; 50 keV; GaAs; GaAs substrates; GaAs:Si/sup +/; MESFETS; ion implantation; thermal-wave technique; thin active layer; threshold voltage control; Annealing; Computer industry; Electrodes; Gallium arsenide; MESFET integrated circuits; Optical modulation; Probes; Production; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.692

Filename

692