• DocumentCode
    1399732
  • Title

    Structure and thermal stability of Ni/Si1-xGex contacts for VLSI applications

  • Author

    Qin, Ming ; Poon, V.M.C. ; Yuen, C.Y.

  • Author_Institution
    Microelectron. Center, Southeast Univ., Nanjing, China
  • Volume
    36
  • Issue
    21
  • fYear
    2000
  • fDate
    10/12/2000 12:00:00 AM
  • Firstpage
    1819
  • Lastpage
    1821
  • Abstract
    The sheet resistance of a Si1-xGex film is measured using the four-point probe method and is shown to remain stable at 350-600°C. X-ray photoelectron spectroscopy analysis suggests that the phase of the contact formed at 450°C is Ni2(Si 1-xGex) or a mixture of Ni2Si and Ni 2Ge, but that a mixture of silicide and germanium is formed at 250°C
  • Keywords
    Ge-Si alloys; VLSI; X-ray photoelectron spectra; contact resistance; interface structure; metallisation; nickel; semiconductor materials; semiconductor-metal boundaries; sintering; thermal stability; 350 to 600 C; Ni-GeSi; Ni/Si1-xGex contacts; Ni2(Si1-xGex); Ni2Ge; Ni2GeSi; Ni2Si; Si1-xGex film; VLSI applications; X-ray photoelectron spectroscopy; contact; four-point probe method; sheet resistance; silicide; structure; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001256
  • Filename
    878658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1399732