Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes

Author

Sunkavalli, Ravishankar ; Baliga, Jayant B. ; Tamba, Akihiro

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

2011

Lastpage

2016

Abstract

The concept of the RESURF DI lateral merged PiN Schottky (LMPS) diodes is introduced and experimentally demonstrated. The LMPS diode combines the advantages of fast switching times of Schottky diodes with the low forward drops exhibited by LPiN diodes. An increase in the ratio of Schottky area relative to the p-n junction area is shown to result in superior reverse recovery characteristics at the expense of an increase in the forward voltage drop. This tradeoff between forward drop and switching speed is achieved in a simple manner by varying the relative areas of the Schottky and p-n junction regions during device design. Since lifetime control is not a viable option in integrated diodes used in power IC´s, the LMPS concept allows tailoring the characteristics of integrated power diodes to the application frequency for the first time

Keywords

Schottky diodes; isolation technology; p-i-n diodes; power integrated circuits; power semiconductor diodes; RESURF DI; Schottky area; device design; dielectrically isolated lateral merged PiN Schottky diodes; forward drops; forward voltage drop; integrated power diodes; power IC; reverse recovery characteristics; switching times; Dielectrics; Electrons; Frequency; P-n junctions; Power integrated circuits; Schottky diodes; Semiconductor diodes; Switching circuits; System performance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641373

Filename

641373