Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor

Author

Miller, D.A.B. ; Feuer, M.D. ; Chang, T.Y. ; Shunk, S.C. ; Henry, J.E. ; Burrows, D.J. ; Chemla, D.S.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

1

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

62

Lastpage

64

Abstract

The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark-effect quantum-well optical modulator, and a metal-semiconductor field-effect transistor (MESFET) to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. To provide an illustration of feasibility, the authors demonstrate signal amplification with a single MESFET.<>

Keywords

Schottky gate field effect transistors; integrated optoelectronics; optical modulation; photodiodes; GaAs; field-effect transistor self-electrooptic effect device; metal-semiconductor field-effect transistor; photodiode; quantum-confined Stark-effect quantum-well optical modulator; Circuits; Diodes; FETs; Gallium arsenide; Optical buffering; Optical modulation; Photodiodes; Stark effect; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87897

Filename

87897