Effect of gate-field dependent mobility degradation on distortion analysis in MOSFETs

Author

Van Langevelde, Ronald ; Klaassen, François M.

Author_Institution

Electron. Devices Group, Eindhoven Univ. of Technol., Netherlands

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

2044

Lastpage

2052

Abstract

Compact MOSFET models in contemporary circuit simulators fail to accurately describe distortion effects. In the ohmic region of the MOSFET, this failure is mainly due to inaccurate modeling of the gate-field dependent mobility degradation effect. In this paper a new model for mobility degradation Is introduced which gives a major improvement in distortion analysis in the linear region for both n-type and p-type MOS transistors. Incorporating a gate voltage dependent series resistance, this model even gives good results for very short channel length devices

Keywords

MOSFET; carrier mobility; circuit CAD; circuit analysis computing; electric distortion; inversion layers; semiconductor device models; MOSFET; circuit simulators; distortion analysis; gate-field dependent mobility degradation; linear region; ohmic region; p-type transistors; series resistance; short channel length devices; Analog circuits; Analytical models; Circuit simulation; Current-voltage characteristics; Degradation; Digital circuits; Failure analysis; MOSFET circuits; Predictive models; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641382

Filename

641382