Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier

Author

Kim, Sung J. ; Guth, G. ; Vella-Coleiro, G.P. ; Seabury, Charles W. ; Sponsler, W.A. ; Rhoades, B.J.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

9

Issue

9

fYear

1988

Firstpage

447

Lastpage

449

Abstract

A monolithically integrated p-i-n FET amplifier, fabricated using ion-planted indium-phosphide (InP) JFETs, is described. The vertically integrated structure consists of a vapor-phase epitaxy (VPE)-grown InGaAs photoabsorption layer and a metal-organic-chemical-vapor-disposition (MOCVD)-grown Fe-doped semi-insulating layer. A Zn diffusion was performed to complete the p-i-n photodiode. High-performance fully implanted InP JFETS were used to form the integrated amplifier with a symmetrical design to remove the DC offset. With a receiver sensitivity of -36.4 dBm measured at 200 Mb/s NRZ for 10/sup -9/ BER, it is thought to be the most sensitive monolithic p-i-n FET preamp yet reported in this frequency range. The p-i-n amplifier has a dynamic range of 15 dB.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; ion implantation; junction gate field effect transistors; optical communication equipment; photodetectors; photodiodes; preamplifiers; semiconductor epitaxial layers; semiconductor junctions; vapour phase epitaxial growth; 200 Mbit/s; InGaAs photoabsorption layer; InP-InGaAs; InP:Fe semiinsulating layer; InP:Fe, Zn; MOCVD; VPE; dynamic range; integrated amplifier; ion implantation; ion-implanted InP JFET amplifier; metal-organic-chemical-vapor-disposition; monolithic p-i-n FET preamp; monolithically integrated p-i-n FET amplifier; p-i-n photodiode; receiver sensitivity; symmetrical design; vapor-phase epitaxy; vertically integrated structure; Epitaxial growth; FETs; Frequency measurement; Indium gallium arsenide; Indium phosphide; JFETs; Monolithic integrated circuits; PIN photodiodes; Photodetectors; Zinc;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6941

Filename

6941