Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K

Author

Laux, Steven E. ; Fischetti, M.V.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

9

Issue

9

fYear

1988

Firstpage

467

Lastpage

469

Abstract

Monte Carlo simulation results for small silicon n-MOSFETs at 77 and 300 K are presented. A complete description of the silicon band structure including consistent scattering rates, electron-electron scattering, and plasma effects is included in the calculation for the first time. The dependence of transconductance on channel length is in excellent agreement with the experiments of G.A. Sai-Halasz et al. (see ibid., vol.EDL-8, p.463-6, Oct. 1987 and ibid., vol.EDL-9, p.464-6, Sep. 1988) and serves to support the expectation of significant velocity overshoot in these devices. For extremely short channels (>

Keywords

Monte Carlo methods; digital simulation; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 1.5 V; 100 nm; 300 K; 77 K; Monte Carlo simulation; NMOS; Si; band structure; consistent scattering rates; dependence of transconductance on channel length; drain biases; electron-electron scattering; experiments; extremely short channels; n-MOSFETs; plasma effects; velocity overshoot; Acoustic scattering; Electrons; Impact ionization; Kinetic energy; MOSFET circuits; Optical scattering; Particle scattering; Physics; Plasma devices; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6947

Filename

6947