Silicon-on-Nitride Waveguide With Ultralow Dispersion Over an Octave-Spanning Mid-Infrared Wavelength Range

Author

Yue, Yang ; Zhang, Lin ; Huang, Hao ; Beausoleil, Raymond G. ; Willner, Alan E.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

4

Issue

1

fYear

2012

Firstpage

126

Lastpage

132

Abstract

The proposed silicon-on-nitride (SON) waveguide exhibits an ultrabroadband (4200 nm), low chromatic dispersion in the mid-infrared (MIR) wavelength region from 2430 to 6630 nm. It has two zero-dispersion wavelengths within the span. Even at 6 , the nonlinear coefficients of the SON waveguides are still comparable with the ones of integrated waveguides around 1550 nm, which are widely used for octave-spanning nonlinear process. This enables a potential nonlinear optical platform for broadband signal processing across the over-one-octave MIR bandwidth.

Keywords

integrated optics; nonlinear optics; optical dispersion; optical waveguides; silicon-on-insulator; Si; broadband signal processing; integrated waveguides; octave-spanning mid-infrared wavelength; octave-spanning nonlinear process; silicon-on-nitride waveguide; ultrabroadband low chromatic dispersion; ultralow dispersion; wavelength 2430 nm to 6630 nm; wavelength 6 mum; zero-dispersion wavelengths; Bandwidth; Chromatic dispersion; Optical waveguides; Silicon; Strips; Microoptics; optics; subwavelength structures; waveguides;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2011.2180016

Filename

6105501