Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications

Author

Kawakubo, T. ; Abe, K. ; Komatsu, S. ; Sano, K. ; Yanase, N. ; Mochizuki, H.

Author_Institution

Labs. of Mater. & Devices Res., Toshiba Corp., Kawasaki, Japan

Volume

18

Issue

11

fYear

1997

Firstpage

529

Lastpage

531

Abstract

A novel ferroelectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ (BSTO)/SrRuO/sub 3/ (SRO) heteroepitaxial technique on Si and strontium titanate substrates. Distinct ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BSTO capacitor showed distinct ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far. Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.

Keywords

barium compounds; dielectric hysteresis; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; reliability; sputter deposition; strontium compounds; vapour phase epitaxial growth; (Ba,Sr)TiO/sub 3//SrRuO/sub 3/ heteroepitaxial technique; BaSrTiO/sub 3/-SrRuO/sub 3/; RF magnetron sputtering; Si; Si substrate; SrTiO/sub 3/; SrTiO/sub 3/ substrate; c-axis elongation; deep submicron memory applications; ferroelectric capacitor cell; ferroelectric properties; lattice mismatch; reliability; submicron Si process compatibility; Capacitors; Dielectrics; Electrodes; Ferroelectric films; Ferroelectric materials; Hysteresis; Lattices; Polarization; Pulse measurements; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641435

Filename

641435