Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

The static and dynamic interaction between monolithically integrated n- and p-channel, high-voltage lateral insulated-gate bipolar transistors (LGBTs) are studied. In the chosen system partition, three common-source, n-channel LIBGTs are monolithically integrated on one chip using junction isolation, while the p-channel counterparts are on a separate chip. Devices on lightly doped substrates, despite their higher forward drop and longer turn-off time than those on heavily doped substrates, exhibited a lesser degree of interaction with adjacent devices, and thus are preferable for power ICs. Even though the steady-state current that flows into the emitters of adjacent devices in the ON-state is small (<5%), there are substantial (as much as 40%) current surges during the turn-on and turn-off transients. Also, the emitter areas also act as minority-carrier injectors during the last phase of the turn-off process. Similar observations are made on LIGBTs with collector shorts and hybrid Schottky injection field-effect transistors (HSINFETs), despite their faster turn-off times