• DocumentCode
    1400888
  • Title

    Sensitivity of High-Speed Lightwave System Receivers Using InAlAs Avalanche Photodiodes

  • Author

    Ong, Daniel S G ; Hayat, Majeed M. ; David, John P R ; Ng, Jo Shien

  • Author_Institution
    Electron. & Electr. Eng. Dept., Univ. of Sheffield, Sheffield, UK
  • Volume
    23
  • Issue
    4
  • fYear
    2011
  • Firstpage
    233
  • Lastpage
    235
  • Abstract
    Calculations based on a rigorous analytical model are carried out to compare the sensitivity of optical receivers that use InP and In0.52Al0.48As avalanche photodiodes (APDs). The model includes the effects of intersymbol interference, tunneling current, avalanche noise and its correlation with the stochastic avalanche duration, dead space, and transimpedance amplifier noise. For a 10-Gb/s system with a bit-error rate of 10-12, the optimum receiver sensitivity predicted for In0.52Al0.48As and InP APDs is -28.6 and -28.1 dBm, respectively, corresponding to a reduction of 11% in optical signal power for receivers using In0.52Al0.48As APDs. Thus, considering overall receiver sensitivity, the improvement offered by In0.52Al0.48As APDs over InP is modest.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; intersymbol interference; optical noise; optical receivers; tunnelling; InAlAs; InP; avalanche noise; avalanche photodiode; dead space; high speed lightwave system receiver; intersymbol interference; optical receiver; stochastic avalanche duration; transimpedance amplifier noise; tunneling current; Avalanche photodiodes (APDs); bandwidth; bit-error rate (BER); intersymbol interference (ISI); noise; receiver sensitivity; tunneling;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2098862
  • Filename
    5664764