Signal-to-noise ratio for lightwave systems using avalanche photodiodes

Author

Hakim, Nagib Z. ; Saleh, Bahaa E A ; Teich, Malvin C.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

9

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

318

Lastpage

320

Abstract

An expression for the signal-to-noise ratio (SNR) at the output of an avalanche photodiode (APD) receiver is derived that includes the effects of photoinjected carriers, dark-generated carriers, and the receiver circuitry. It is found that the dark current alters both the magnitude of the SNR and the value of the mean multiplication where the SNR achieves its maximum value. The formula differs from the expression that is conventionally used (S.M. Sze, 1981) in that it makes use of different excess noise factors for photo-generated and dark-generated carriers

Keywords

avalanche photodiodes; electron device noise; optical communication equipment; receivers; APD receiver; avalanche photodiodes; dark current; dark-generated carriers; excess noise factors; lightwave systems; mean multiplication; photo-generated carriers; photoinjected carriers; receiver circuitry; signal-to-noise ratio; Avalanche photodiodes; Circuit noise; Dark current; Electron optics; Noise generators; Optical detectors; Optical noise; Optical receivers; Signal detection; Signal to noise ratio;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.70006

Filename

70006