Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

Author

Lee, Yao-Jen ; Chuang, Shang-Shiun ; Hsueh, Fu-Kuo ; Lin, Ho-Ming ; Wu, Shich-Chuang ; Wu, Ching-Yi ; Tseng, Tseung-Yuen

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

32

Issue

2

fYear

2011

Firstpage

194

Lastpage

196

Abstract

Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120°C to 140°C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150°C reduction in maximum temperature at the same activation concentration (about 2 × 10¹⁹ cm^-3) could be achieved. Through adjusting the microwave power and process time, sheet resistance could be decreased while suppressing dopant diffusion. In addition, the inserted susceptor wafers above and below the processing wafer also suppressed the dopant diffusion and improved film roughness.

Keywords

annealing; epitaxial growth; germanium; phosphorus; semiconductor doping; silicon; Si; dopant activation; dopant diffusion suppression; film roughness; germanium epitaxy; low-temperature microwave annealing; phosphorus activation; sheet resistance; silicon wafer; single-crystalline germanium; susceptor wafers; temperature 120 C to 140 C; temperature reduction; Germanium; low temperature; microwave anneal; phosphorus; rapid thermal anneal (RTA);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2090937

Filename

5665750