GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount

Author

Sun, Y.X. ; Chen, W.S. ; Hung, S.C. ; Lam, K.T. ; Liu, C.H. ; Chang, Shoou-Jinn

Author_Institution

Dept. of Mater. Sci. & Eng., China Univ. of Pet., Dongying, China

Volume

33

Issue

2

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

433

Lastpage

437

Abstract

The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

Keywords

copper; electrostatic discharge; flip-chip devices; gallium compounds; light emitting diodes; wide band gap semiconductors; Cu; GaN; current 350 mA; electrostatic discharge; internal ESD protection diode; power 366.5 mW to 273.9 mW; power flip-chip LED; power flip-chip light-emitting diodes; reverse ESD stressing; voltage 12000 V; voltage 20000 V; voltage 3.22 V to 3.38 V; Electrostatic discharge (ESD); GaN; flip-chip; internal protection diode; light emitting diode (LED);

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/TADVP.2009.2037806

Filename

5405053