• DocumentCode
    1402221
  • Title

    Formation of silicon nanograss and microstructures on silicon using deep reactive ion etching

  • Author

    Mehran, M. ; Sanaee, Z. ; Mohajerzadeh, Shamsoddin

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
  • Volume
    5
  • Issue
    6
  • fYear
    2010
  • fDate
    12/1/2010 12:00:00 AM
  • Firstpage
    374
  • Lastpage
    378
  • Abstract
    A hydrogen-assisted reactive ion etching method for the silicon nanograss formation in desirable shapes and locations is reported. By controlling the etching parameters of this process, one can achieve grass-free high aspect ratio vertical structures on silicon substrates or arrive at grass-full structures in pre-designed features and in desired places. Using this method vertical or spaghetti-like Si nanograss with a height of 2-3--m and width of 30-100-nm is realised. The effect of SF6 as a critical parameter on the nanograss formation has been studied relating the grass density and width to pressure and power. Inclusion of grass onto the silicon surface changes its wetting parameter to make it hydrophilic and oleophilic. The resonance frequency of silicon membranes with the addition of nanograss has shown a significant drop because of an improved surface adhesion to oil, owing to increasing the effective mass of the membrane.
  • Keywords
    adhesion; crystal microstructure; elemental semiconductors; hydrophilicity; membranes; nanofabrication; nanostructured materials; semiconductor growth; silicon; sputter etching; surface morphology; wetting; SF6 effect; Si; effective mass; grass-free high aspect ratio vertical structure; hydrogen-assisted reactive ion etching; hydrophilic surface; microstructure; oil; oleophilic surface; silicon membranes; silicon nanograss; size 2 mum to 3 mum; size 30 nm to 100 nm; spaghetti-like nanograss; surface adhesion; surface morphology; wetting;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2010.0111
  • Filename
    5665909