Effect of finite metallization and inhomogeneous dopings on slow-wave-mode propagation

Author

Kucera, Jacob J. ; Gutmann, Ronald J.

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

45

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1807

Lastpage

1810

Abstract

A finite-element simulation has been implemented to evaluate the slow-wave-mode propagation characteristics in metal-insulator-semiconductor (MIS) waveguiding structures. Particular emphasis has been placed on coplanar waveguides compatible with silicon integrated circuits (ICs), with an objective of evaluating the effect of inhomogeneous doping on propagation characteristics. The simulator has been successfully benchmarked against a number of cases presented in the literature, including MIS coplanar waveguides. The effect of inhomogeneous doping and finite metallization in maintaining a large slowing factor while reducing the attenuation constant and increasing transmission-line Q is presented, and constraints on slow-wave-mode passive components are discussed

Keywords

MIS devices; MIS structures; MMIC; Q-factor; coplanar waveguides; digital integrated circuits; doping profiles; finite element analysis; integrated circuit metallisation; slow wave structures; CPW; MIS waveguiding structures; Si; Si integrated circuits; coplanar waveguides; finite metallization; finite-element simulation; inhomogeneous dopings; metal-insulator-semiconductor structures; propagation characteristics; slow-wave-mode passive components; slow-wave-mode propagation; transmission-line Q; Attenuation; Circuit simulation; Coplanar waveguides; Doping; Finite element methods; Metal-insulator structures; Metallization; Silicon; Transmission lines; Waveguide components;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.641761

Filename

641761