Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory

Author

Huang, Po-Chun ; Chen, Lu-An ; Sheu, Jeng-Tzong

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

31

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

216

Lastpage

218

Abstract

A high-performance gate-all-around (GAA) poly-Si nanowire (NW) SONOS-type memory thin-film transistor (TFT) is presented. The presence of the corners of the GAA structure resulted in the program speed and memory window of this device being superior to those of a planar poly-Si TFT device. When erasing, planar devices exhibit a threshold-voltage shift resulting from gate injection; the GAA device was immune to this behavior. The presence of a nonuniform electric field in the channel region during programming and erasing was confirmed through simulation. The device also exhibited superior endurance and data-retention behavior.

Keywords

electric fields; elemental semiconductors; field effect transistors; nanowires; silicon; thin film transistors; Si; data-retention behavior; electric field enhancement; gate-all-around nanowire SONOS-type memory thin-film transistor; nonuniform electric field; planar poly-Si TFT device; threshold-voltage shift; Field enhancement; SONOS; gate injection; gate-all-around (GAA); nanowire (NW); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2038177

Filename

5406072