Numerical analysis of breakdown voltage using quasi three dimensional device simulation

Author

Yabuta, Akira ; Hwang, Chang G. ; Suzumura, Masahiko ; Dutton, Ropert W.

Author_Institution

Intgrated Circuits Lab., Stanford Univ., CA, USA

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

1132

Lastpage

1140

Abstract

PISCES-IIB is extended to a quasi-three-dimensional simulator for cylindrical symmetric structures. A self-consistent solution of the Poisson and current-continuity equations using an impact ionization model allows simulation of the complete reverse characteristics for planar junction devices. A p⁺-n diode with circular geometry and a floating-field limiting ring structure is used to investigate breakdown characteristics. Results of the simulation clearly show the three-dimensional effects of potential distributions and predict the dependence of breakdown voltage on the radius of the rounded patterning mask, in agreement with experimental results

Keywords

digital simulation; electric breakdown of solids; electronic engineering computing; impact ionisation; semiconductor device models; voltage distribution; 3D device simulation; PISCES-IIB; Poisson equations; breakdown characteristics; breakdown voltage; circular geometry; current-continuity equations; cylindrical symmetric structures; floating-field limiting ring; impact ionization model; p⁺-n diode; planar junction devices; potential distributions; quasi-three-dimensional simulator; reverse characteristics; rounded patterning mask radius; semiconductor devices; Analytical models; Computational modeling; Diodes; Electric breakdown; Geometry; Impact ionization; Integral equations; Numerical analysis; Poisson equations; Predictive models;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52452

Filename

52452