Synthesis and field-emission properties of oriented GaN nanowires

Author

Enling Li ; Xuhui Cheng ; Danna Zhao ; Rui Xu ; Meng Xi ; Zhen Cui ; Tao Zhao

Author_Institution

Sci. Sch., Xi´an Univ. of Technol., Xi´an, China

Volume

7

Issue

12

fYear

2012

fDate

12/1/2012 12:00:00 AM

Firstpage

1305

Lastpage

1307

Abstract

Oriented gallium nitride (GaN) nanowires grown on Pt-coated Si (111) substrates, were synthesised using the chemical vapour deposition method under different Ga sources. The characteristics of the grown GaN nanowires were investigated using scanning electron microscopy and X-ray diffraction, which found that the as-synthesised GaN nanowires of the three samples are of different orientation, and all displayed hexagonal wurtzite structures of GaN crystals. The electron field-emission properties of the three samples of GaN nanowires showed a low turn-on field of 4.5, 5.5 and 6.2 V/μm, respectively, and field enhancement factors of 1337, 2948 and 2599, respectively.

Keywords

III-V semiconductors; X-ray diffraction; chemical vapour deposition; field emission; gallium compounds; nanofabrication; nanowires; scanning electron microscopy; wide band gap semiconductors; Ga sources; GaN; GaN crystals; Pt-Si; Pt-coated Si (111) substrates; X-ray diffraction; chemical vapour deposition; electron field-emission properties; field emission properties; field enhancement factor; hexagonal wurtzite structures; oriented GaN nanowires; scanning electron microscopy; turn-on field;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2012.0829

Filename

6419620