DocumentCode
1403706
Title
Measurement of MOSFET channel potential profile
Author
Yeow, Yew-Tong
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
35
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2368
Lastpage
2372
Abstract
A method for the extraction of the channel potential of a MOSFET from the gate-to-drain capacitance is presented. The method is demonstrated on two devices. Comparison is made between experimental results and numerical simulation. It is shown that a potential drop within the drain diffusion would reduce the actual voltage drop across the channel. A technique to account for this voltage drop is also given
Keywords
insulated gate field effect transistors; MOSFET channel potential profile; channel potential; drain diffusion; experimental results; gate-to-drain capacitance; measurement method; numerical simulation; potential drop; voltage drop; Area measurement; Capacitance measurement; Data mining; FETs; Frequency measurement; Length measurement; MOSFET circuits; Numerical simulation; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.8816
Filename
8816
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