A compact low-power BiCMOS log-domain filter

Author

Punzenberger, Manfred ; Enz, Christian C.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

33

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1123

Lastpage

1129

Abstract

A third-order Chebyshev filter based on the log-domain principle and integrated in a 1-μm BiCMOS process is presented. It has a nominal cutoff frequency of 320 kHz corresponding to a bias current of 1 μA, and can be frequency tuned over almost three decades up to about 10 MHz. It operates with a nominal supply voltage of 1.2 V, maintaining a dynamic range (DR) at 1% THD of 57 dB. For cutoff frequencies in the range of 10 kHz, the supply voltage can be reduced down to 0.9 V. The filter occupies an active area of 0.25 mm² and dissipates 23 μW, corresponding to a power consumption per pole and edge frequency of only 24 pJ. These results demonstrate the potential of log-domain filters for very low-voltage and low-power applications

Keywords

BiCMOS analogue integrated circuits; circuit tuning; continuous time filters; integrated circuit design; 0.9 to 1.2 V; 1 micron; 1 muA; 10 kHz; 23 muW; 24 pJ; 320 kHz; BiCMOS log-domain filter; THD; active area; bias current; cutoff frequencies; dynamic range; edge frequency; frequency tuning; low-power applications; nominal cutoff frequency; nominal supply voltage; power consumption; third-order Chebyshev filter; BiCMOS integrated circuits; Bipolar transistors; Current supplies; Cutoff frequency; Energy consumption; Nonlinear filters; Power harmonic filters; Signal processing; Transfer functions; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.701278

Filename

701278