Lateral nonuniformities and the MOSFET mobility step near threshold

Author

Wikstrom, Jan A. ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2378

Lastpage

2383

Abstract

The reduction in extracted conductance mobility is explained in terms of an increased drain-to-source channel resistance because of lateral nonuniformities at the Si-SiO₂ interface. The effects of the nonuniformities in the inversion regime are best characterized by a quasiuniform model. C-V measurements are used to obtain independently the statistical distribution of flat-band voltages in the quasiuniform model. This information is used to simulate the two-dimensional current flow in the nonuniform inversion layer by a resistor network. The simulations are compared with accurate mobility measurements over a wide carrier-density range. The results show that the step in extracted room-temperature conductance mobility can be attributed to nonuniformities while no reduction occurs in the microscopic mobility

Keywords

insulated gate field effect transistors; semiconductor device models; C-V measurements; MOSFET mobility step near threshold; Si-SiO₂ interface; drain-to-source channel resistance; flat-band voltages; inversion regime; lateral nonuniformities; microscopic mobility; mobility measurements; mobility reduction; nonuniform inversion layer; quasiuniform model; resistor network; room-temperature conductance mobility; statistical distribution; two-dimensional current flow; wide carrier-density range; Capacitance-voltage characteristics; Charge carrier density; Density measurement; Fluctuations; MOSFET circuits; Microscopy; Resistors; Scattering; Statistical distributions; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8818

Filename

8818