High-power single-mode simplified antiresonant reflecting optical waveguide (S-ARROW) distributed feedback semiconductor lasers

Author

Yang, H. ; Nesnidal, M. ; Al-Muhanna, A. ; Mawst, L.J. ; Botez, D. ; Vang, T.A. ; Alvarez, F.D. ; Johnson, R.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

Volume

10

Issue

8

fYear

1998

Firstpage

1079

Lastpage

1081

Abstract

Simplified antiresonant-reflective-optical-waveguide distributed-feedback semiconductor lasers based on Al-free InGaAs-InGaAsP-InGaP materials are reported for the first time. Devices with 6.5-μm-wide emitting apertures operate single-frequency (/spl lambda/=0.968 μm) and single-spatial-mode to 157-mW continuous-wave output power. The full-width at half-maximum of the lateral far-field pattern is 4.5/spl deg/, in excellent agreement with theory. Relative intensity noise values as low as -154 dB/Hz are measured between 500 MHz and 8 GHz.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser frequency stability; laser modes; laser noise; laser transitions; quantum well lasers; waveguide lasers; 0.968 mum; 157 mW; 6.5 mum; ARROW; Al-free InGaAs-InGaAsP-InGaP materials; InGaAs double quantum well lasers; InGaAs-InGaAsP-InGaP; emitting apertures; full-width at half-maximum; high-power single-mode simplified antiresonant reflecting optical waveguide distributed feedback semiconductor lasers; high-power single-mode simplified antiresonant reflecting optical waveguide lasers; lateral far-field pattern; mW continuous-wave output power; relative intensity noise values; single-frequency lasers; single-spatial-mode; Apertures; Laser noise; Laser theory; Noise measurement; Optical materials; Power generation; Semiconductor device noise; Semiconductor lasers; Semiconductor materials; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.701508

Filename

701508