Statistical Retardation Delay of I-MOS and Its Measurement Using TDR

Author

Cho, Hyunbo ; Onal, Caner ; Griffin, Peter B. ; Plummer, James D.

Author_Institution

Center for Integrated Syst., Stanford Univ., Stanford, CA, USA

Volume

32

Issue

2

fYear

2011

Firstpage

206

Lastpage

208

Abstract

In this letter, we study the statistical retardation delay of the impact ionization MOSFET (I-MOS) that is observed during the turn-on transient. Since seed carriers are required to initiate an avalanche breakdown in the I-MOS, the turn-on delay of the I-MOS has an additional random component associated with the generation of seed carriers. The characteristics of this delay are statistically analyzed and measured for the first time with time-domain reflectometry. The results show a fundamental limitation of the I-MOS delay, which is directly associated with the leakage current.

Keywords

MOSFET; avalanche breakdown; impact ionisation; leakage currents; statistical analysis; time-domain reflectometry; I-MOS delay; avalanche breakdown; impact ionization MOSFET; leakage current; seed carrier; statistical analysis; statistical retardation delay; time-domain reflectometry; turn-on delay; turn-on transient; Carrier multiplication delay (CMD); impact ionization MOSFET (I-MOS); statistical retardation delay (SRD); transient performance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2090491

Filename

5669331