High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Author

Lesecq, M. ; Hoel, V. ; Etangs-Levallois, A. Lecavelier des ; Pichonat, E. ; Douvry, Y. ; De Jaeger, J.C.

Author_Institution

Inst. d´´Electron., de Microelectron. et de Nanotechnol., Unite Mixte de Rech. Centre Nat. de la Rech. Sci., Villeneuve-d´´Ascq, France

Volume

32

Issue

2

fYear

2011

Firstpage

143

Lastpage

145

Abstract

In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (L_G = 2 μm) on a flexible tape are presented. Under 0.16 % strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands V_DS = 18 V.

Keywords

III-V semiconductors; adhesives; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; adhesive flexible tape; current density; drain bias; drain current; gate bias; high electron mobility transistors; transmission line method; voltage 18 V; voltage 3 V; Adhesive flexible tape; GaN; high-electron-mobility transistors (HEMTs); strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2091251

Filename

5671464