DocumentCode
1407626
Title
Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si
Author
Bera, L.K. ; Ray, S.K. ; Mukhopadhyay, M. ; Nayak, D.K. ; Usami, N. ; Shiraki, Y. ; Maiti, C.K.
Author_Institution
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Volume
19
Issue
8
fYear
1998
Firstpage
273
Lastpage
275
Abstract
Growth of ultrathin (<100 /spl Aring/) oxynitride on strained-Si using microwave N/sub 2/O and NH/sub 3/ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO/sub 2/ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1/spl times/10/sup 10/ cm/sup -2/) has been obtained for NH/sub 3/ plasma treated N/sub 2/O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress.
Keywords
MIS structures; X-ray photoelectron spectra; insulating thin films; nitridation; oxidation; silicon compounds; Fowler-Nordheim constant current stress; MIS structure; N/sub 2/O; N/sub 2/O/NH/sub 3/ microwave plasma; NH/sub 3/; Si-SiON; X-ray photoelectron spectroscopy; breakdown voltage; charge trapping; electrical properties; insulator charge density; strained Si/SiO/sub 2/ interface; ultrathin oxynitride growth; Buffer layers; Germanium silicon alloys; HEMTs; MODFETs; Oxidation; Plasma density; Plasma properties; Plasma temperature; Plasma x-ray sources; Silicon germanium;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.704397
Filename
704397
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