DocumentCode
1408477
Title
Electron field emission through a very thin oxide layer
Author
Yang, Guang ; Chin, K.Ken ; Marcus, R.B.
Author_Institution
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Volume
38
Issue
10
fYear
1991
fDate
10/1/1991 12:00:00 AM
Firstpage
2373
Lastpage
2376
Abstract
Field emission of an emitter covered with a very thin oxide layer is modeled and calculated numerically. The additional barrier due to the oxide layer is included in the tunneling problem by using the standard WKB method. The following physical parameters are considered: the oxide barrier height, the oxide conduction band-edge electron effective mass, and the oxide dielectric constant. Compared with the Fowler-Nordheim equation, which was derived for a clean metallic emitter, the calculation shows a reduction of the emission current density from an emitter covered with an oxide layer a few monolayers thick. After reaching a minimum emission current density, the emission increases when the thickness of the oxide layer increases further. Finally, the emission current density is saturated and stabilized
Keywords
electron field emission; oxide coated cathodes; vacuum microelectronics; Fowler-Nordheim equation; additional barrier; emission current density minimum; emission current density saturation; metallic emitter; model; monolayers thick; oxide barrier height; oxide conduction band-edge electron effective mass; oxide dielectric constant; oxide thickness; physical parameters; standard WKB method; thin oxide layer; tunneling problem; Atomic layer deposition; Current density; Dielectric constant; Effective mass; Electron emission; Equations; Microelectronics; Numerical models; Silicon; Surface cleaning;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.88528
Filename
88528
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