Advanced CMOS–MEMS Resonator Platform

Author

Li, Cheng-Syun ; Hou, Li-Jen ; Li, Sheng-Shian

Author_Institution

Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

33

Issue

2

fYear

2012

Firstpage

272

Lastpage

274

Abstract

Deep-submicrometer-gap CMOS-MEMS “composite” resonators fabricated using 0.18- μm-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 kΩ at 15.3 MHz. A simple maskless wet release process has been successfully transferred from a 0.35- μm platform to an advanced 0.18-μm version, capable of offering enhanced gap spacing and transduction area for CMOS-MEMS resonators monolithically integrated with high-performance CMOS circuitry. This proposed platform offers ease of use, fast turnaround time, low cost, convenient prototyping, and inherent MEMS-circuit integration, therefore showing great potential toward future integrated sensing and single-chip RF applications.

Keywords

CMOS integrated circuits; electromechanical effects; micromechanical resonators; CMOS circuitry; CMOS-MEMS resonator platform; CMOS-MEMS resonators; MEMS-circuit integration; deep-submicrometer-gap CMOS-MEMS composite resonators; electromechanical coupling coefficient; enhanced gap spacing; frequency 15.3 MHz; maskless wet release process; motional impedance; poly-6-metal foundry CMOS technology; resistance 880 Gohm; single-chip RF applications; size 0.18 mum; transduction area; CMOS integrated circuits; CMOS technology; Frequency measurement; Impedance; Micromechanical devices; Resonant frequency; Temperature measurement; CMOS–MEMS; composite structure; deep submicrometer gap; monolithic integration; resonators; thermal stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2175695

Filename

6112657