DocumentCode
1408881
Title
A Reliability Study on Green InGaN–GaN Light-Emitting Diodes
Author
Li, Z.L. ; Lai, P.T. ; Choi, H.W.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume
21
Issue
19
fYear
2009
Firstpage
1429
Lastpage
1431
Abstract
In this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various device parameters, including leakage current, 1/f noise, and degradation rate. It was found that as the wavelength of green LEDs increases from 520 to 550 nm by increasing the indium content in the quantum wells, the defect density also increases, thus leading to larger leakage current, enhanced noise magnitude, and shortened device lifetime.
Keywords
1/f noise; III-V semiconductors; gallium compounds; indium compounds; leakage currents; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; 1/f noise; InGaN-GaN; green light-emitting diodes; leakage current; quantum wells; reliability study; wavelength 520 nm; wavelength 550 nm; Annealing; Atomic force microscopy; Capacitive sensors; Degradation; Gallium nitride; Helium; Indium; Leakage current; Light emitting diodes; Lithography; Light-emitting diode (LED); reliability;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2028155
Filename
5247157
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