• DocumentCode
    1409475
  • Title

    Equivalent circular defect model of real defect outlines in the IC manufacturing process

  • Author

    Jiang, Xiaohong ; Hao, Yue ; Xu, Guohua

  • Author_Institution
    Inst. of Microelectron., Xidian Univ., Xi´´an, China
  • Volume
    11
  • Issue
    3
  • fYear
    1998
  • fDate
    8/1/1998 12:00:00 AM
  • Firstpage
    432
  • Lastpage
    441
  • Abstract
    For efficient yield prediction and inductive fault analysis of integrated circuits (IC´s), it is usually assumed that defects related to photolithography have the shape of circular discs or squares. Real defects, however, exhibit a great variety of shapes. This paper presents an accurate model to characterize those real defects. The defect outline is used in this model to determine an equivalent circular defect such that the probability that the circular defect causes a fault is the same as the probability that the real defect causes a fault, so a norm is available which ran be used to determine the accuracy of a defect model, and thus estimate approximately the error that will be aroused in the prediction of fault probability of a pattern by using circular defect model. Finally, the new model is illustrated with the real defect outlines obtained by optical inspection
  • Keywords
    integrated circuit yield; photolithography; semiconductor process modelling; IC manufacturing; defect shape; equivalent circular defect model; fault probability; inductive fault analysis; optical inspection; photolithography; real defect outline; yield; Circuit analysis; Circuit faults; Conductors; Inspection; Integrated circuit modeling; Integrated circuit yield; Manufacturing processes; Pattern analysis; Predictive models; Shape;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.705378
  • Filename
    705378