DocumentCode
1409994
Title
Modeling of short geometry polycrystalline-silicon thin-film transistor
Author
Chopra, Sonia ; Gupta, R.S.
Author_Institution
Dept. of Electron. Sci., Delhi Univ., India
Volume
47
Issue
12
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2444
Lastpage
2446
Abstract
An accurate model for the device characteristics of a short geometry polysilicon thin-film transistor (poly-Si TFT) is developed. The proposed channel length dependent threshold voltage and the current-voltage (I-V) characteristics determined are in excellent agreement with experimental results confirming the validity of this model. The impact of the grain size on device characteristics is also shown.
Keywords
elemental semiconductors; grain size; semiconductor device models; silicon; thin film transistors; Si; accurate model; channel length dependent threshold voltage; current-voltage characteristics; device characteristics; grain size; poly-Si TFT; short geometry polycrystalline-silicon thin-film transistor; Displays; Geometry; Grain boundaries; Grain size; Semiconductor thin films; Silicon; Solid modeling; Thin film sensors; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.887036
Filename
887036
Link To Document