Magnetic and transport properties of sub-micron ferromagnetic wires

Author

Otani, Yoshichika ; Kim, Seung Gu ; Fukamichi, Kazuaki ; Kitakami, O. ; Shimada, Yusuke

Author_Institution

Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan

Volume

34

Issue

4

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1096

Lastpage

1098

Abstract

Submicron Co wires with a variable width in the range from 0.2 to 2 μm and paired Co disks with a variable diameter in the range from 0.4 to 5 μm were prepared to investigate the magnetoresistance effect in association with the domain wall formation. A clear change in resistivity due to traversing domain wall along the wire is observed for all the widths in both longitudinal and transverse magnetoresistance effects. The domain wall gives a negative contribution to the magnetoresistance effect. Longitudinal magnetoresistance effects of paired Co disks show an anomalous increase in low fields below 20 kOe due to the peculiar vortex structure stabilized in the disk

Keywords

cobalt; ferromagnetic materials; magnetic domain walls; magnetic thin films; magnetoresistance; nanostructured materials; 0.2 to 2 mum; 0.4 to 5 mum; Co; Co wires; Si; domain wall formation; low fields; magnetic properties; magnetoresistance effect; negative contribution; paired Co disks; resistivity; sub-micron ferromagnetic wires; transport properties; traversing domain wall; vortex structure; Conductivity; Electrons; Magnetic anisotropy; Magnetic domain walls; Magnetic field measurement; Magnetic properties; Magnetoresistance; Optical films; Perpendicular magnetic anisotropy; Wires;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.706372

Filename

706372