DocumentCode
1414145
Title
Power amplifier/low noise amplifier RF switch
Author
Lee, Tze Kiu ; Chan, Wing Shing ; Siu, T.Y.M.
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
Volume
36
Issue
24
fYear
2000
fDate
11/23/2000 12:00:00 AM
Firstpage
1983
Lastpage
1984
Abstract
Front-end RF switches commonly use PIN diodes as the switching element. A novel RF switch using the existing front-end power amplifier and low noise amplifier to give better performance with reduced component count and lower cost is demonstrated
Keywords
UHF power amplifiers; mobile radio; radio equipment; radiofrequency amplifiers; semiconductor switches; cost reduction; duplexer; front-end RF switches; front-end power amplifier; low noise amplifier; power amplifier/LNA RF switch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001404
Filename
888270
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