• DocumentCode
    1414447
  • Title

    Modelling of direct tunnelling for thin SiO2 film on n-type Si(100) by Wentzel, Kramers, Brillouin method

  • Author

    Matsuo, N. ; Takami, Y. ; Kitagawa, Y. ; Miyoshi, T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Yamaguchi Univ., Ube, Japan
  • Volume
    36
  • Issue
    24
  • fYear
    2000
  • fDate
    11/23/2000 12:00:00 AM
  • Firstpage
    2046
  • Lastpage
    2047
  • Abstract
    The modelling of direct tunnelling (DT) through thin SiO2 films on n-type Si(100) using the WKB method is discussed. The emission of the electron from the quantised energy level at the SiO2/Si interface and the accumulation of the electron at the interface are assumed. By calculating the DT currents using this model, the reproducibility of the I-V characteristics is examined
  • Keywords
    WKB calculations; elemental semiconductors; insulating thin films; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; I-V characteristics; Si; SiO2; WKB method; direct tunnelling; n-type Si(100); quantised energy level; reproducibility; thin SiO2 film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001403
  • Filename
    888314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1414447