• DocumentCode
    1415373
  • Title

    Temperature dependency of x-cut LiNbO3 modulator DC drift

  • Author

    Nagata, H. ; Ishizuka, Y. ; Akizuki, K.

  • Author_Institution
    Optoelectron. Res. Div., Sumitomo Osaka Cement Co. Ltd., Chiba, Japan
  • Volume
    36
  • Issue
    23
  • fYear
    2000
  • fDate
    11/9/2000 12:00:00 AM
  • Firstpage
    1952
  • Lastpage
    1953
  • Abstract
    The activation energy (Ea) for DC drifts of x-cut LiNbO 3 (LN) modulators was obtained to be 1.4±0.2 eV based on statistical consideration of long-term biased aging test data at 100 and 120°C. Ea=1.4 eV means that 20 years of device life at 65°C- common system requirements can be promptly tested by 9 days aging at 120°C
  • Keywords
    ageing; lithium compounds; optical materials; optical modulation; optical testing; reliability; 1.4 eV; 100 C; 120 C; 20 y; 65 C; 9 d; DC drift; DC drifts; LiNbO3; LiNbO3 modulator; activation energy; aging; device life; long-term biased aging test data; statistical consideration; temperature dependency; x-cut materials;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001355
  • Filename
    888677