High-voltage GaN pin vertical rectifiers with 2 μm thick i-layer

Author

Zhu, T.G. ; Lambert, D.J.H. ; Shelton, B.S. ; Wong, M.M. ; Chowdhury, U. ; Kwon, Ho Ki ; Dupuis, R.D.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

36

Issue

23

fYear

2000

fDate

11/9/2000 12:00:00 AM

Firstpage

1971

Lastpage

1972

Abstract

Gallium nitride pin rectifiers have been fabricated and characterised. The device structures were grown by metalorganic chemical vapour deposition on c-plane sapphire substrates. The pin diode epitaxial structure consisted of an n⁺-GaN layer, followed by a 2 μm i-GaN layer and a p-type GaN layer on top. The mesa-structure pin diodes exhibited a blocking voltage as large as V_r≃-410 V at a reverse current density of I_r≃10 A/cm² and a forward voltage drop of only 8 V at a forward current density of ~100 A/cm². These values indicate that GaN-based pin rectifiers can be useful in high-voltage circuits

Keywords

III-V semiconductors; MOCVD; current density; gallium compounds; p-i-n diodes; semiconductor device measurement; semiconductor growth; solid-state rectifiers; wide band gap semiconductors; -410 V; 2 mum; 8 V; Al₂O₃; GaN; GaN-based pin rectifiers; blocking voltage; c-plane sapphire substrates; device structure; forward current density; forward voltage drop; gallium nitride pin rectifiers; high-voltage GaN pin vertical rectifiers; high-voltage circuits; i-GaN layer; i-layer; mesa-structure pin diodes; metalorganic chemical vapour deposition; n⁺-GaN layer; p-type GaN layer; pin diode epitaxial structure; reverse current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001329

Filename

888689