DocumentCode
1415935
Title
Integration of low permittivity dielectric in Al dual damascene architecture for low parasitic on-chip interconnect applications
Author
Zhao, B. ; Feiler, D. ; Liu, Q.Z. ; Nguyen, C.H. ; Brongo, M. ; Kuei, J. ; Ramanathan, V. ; Zhang, H. ; Wu, J. ; Rumer, M. ; Biberger, M.A. ; Sachan, V. ; James, D.
Author_Institution
Semicond. Syst., Rockwell Int. Corp., Newport Beach, CA, USA
Volume
34
Issue
13
fYear
1998
fDate
6/25/1998 12:00:00 AM
Firstpage
1309
Lastpage
1310
Abstract
A low dielectric constant (low-κ) material has been successfully integrated in an Al dual damascene interconnect architecture where the low-κ dielectric (κ<3) was used as the intra/inter level dielectric (ILD). In addition to a reduction in intra-level and inter-level capacitance, low via resistance, excellent electrical isolation, and good reliability characteristics were observed
Keywords
aluminium; dielectric thin films; integrated circuit interconnections; integrated circuit reliability; isolation technology; permittivity; Al; dielectric constant; dual damascene architecture; electrical isolation; inter level dielectric; intra level dielectric; low permittivity dielectric; on-chip interconnect applications; reliability characteristics; via resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980951
Filename
707209
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