DocumentCode
1416676
Title
High-Power 2.2- 
m Diode Lasers With Metamorphic Arsenic-Free Heterostructures
Author
Kipshidze, Gela ; Hosoda, Takashi ; Sarney, Wendy L. ; Shterengas, Leon ; Belenky, Gregory
Author_Institution
Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, New York, NY, USA
Volume
23
Issue
5
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
317
Lastpage
319
Abstract
Metamorphic virtual substrates with lattice constants 0.9% larger than those of GaSb were developed by solid-source molecular beam epitaxy. The mismatch between the parent GaSb and the virtual substrate was accommodated by a network of misfit dislocations formed in GaInSb buffer layers with linearly graded indium and gallium compositions. Arsenic-free laser heterostructures emitting at 2.2 μm at room temperature were grown on virtual substrates. The antimony was the only group V element used in growth. These novel diode lasers operate at room temperature and generate above 1.4 W of continuous-wave (CW) power.
Keywords
dislocations; integrated optics; molecular beam epitaxial growth; semiconductor lasers; Ga0.84In0.16Sb; buffer layers; continuous-wave power; high-power diode lasers; lattice constants; linearly graded gallium composition; linearly graded indium composition; metamorphic arsenic-free heterostructures; metamorphic virtual substrates; misfit dislocations; solid-source molecular beam epitaxy; temperature 293 K to 298 K; wavelength 2.2 mum; Diode laser; GaSb; infrared; metamorphic;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2103053
Filename
5678623
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