DocumentCode
1416733
Title
Analysis of semiconductor laser arrays with high-intensity uniformity
Author
Buus, Jens
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
Volume
24
Issue
1
fYear
1988
fDate
1/1/1988 12:00:00 AM
Firstpage
22
Lastpage
28
Abstract
It is shown that an array with a highly uniform intensity distribution can be constructed. This decreases the spatial hole burning and makes stable, high-power operation easier. An estimate of the remaining spatial hole burning is derived and it is shown how its effects can be compensated for. It is considered that laser arrays which operate in the fundamental mode even at high-power levels can be designed
Keywords
laser theory; optical hole burning; semiconductor junction lasers; fundamental mode; high-intensity uniformity; semiconductor laser arrays; spatial hole burning; stable high-power operation; Charge carrier density; Chirp; Laser beams; Laser modes; Laser theory; Optical arrays; Optical coupling; Optical design; Phased arrays; Semiconductor laser arrays;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.89
Filename
89
Link To Document