DocumentCode
1417091
Title
Multibit Operation of Nanoelectromechanical Memory Cells
Author
Lee, Kwangseok ; Choi, Woo Young
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Volume
33
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
309
Lastpage
311
Abstract
The multibit operation of nanoelectromechanical memory cells has been modeled analytically. Based on the modeling results, the design guideline for stable multibit operation has been presented. Large release voltage shift can be obtained by decreasing the initial gap between the charge-trapped layer and beam , the initial gap between the assistant word line and beam , beam thickness , and Young´s modulus or by increasing the effective oxide thickness and beam length .
Keywords
Young´s modulus; integrated memory circuits; nanoelectromechanical devices; Young modulus; assistant word line; beam length; beam thickness; charge-trapped layer; design guideline; multibit operation; nanoelectromechanical memory cells; oxide thickness; voltage shift; Analytical models; Approximation methods; Educational institutions; Force; Hysteresis; Nonvolatile memory; Structural beams; Analytical modeling; H cell; T cell; multibit operation; nanoelectromechanical (NEM) memory;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2178390
Filename
6125974
Link To Document