Modeling effects of electron-velocity overshoot in a MOSFET

Author

Roldán, J.B. ; Gámiz, F. ; López-Villanueva, J.A. ; Carceller, J.E.

Author_Institution

Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

841

Lastpage

846

Abstract

A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFETs has been obtained. This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced can be easily taken into account in our model. The accuracy of this model has been verified by reproducing experimental and simulated data reported by other authors

Keywords

MOSFET; electric admittance; electron mobility; semiconductor device models; MOSFET transconductance increase; analytical expression; channel length reduction; circuit simulators; electron-velocity overshoot effects; low-field mobility; modeling; temperature effect; very short-channel MOSFET; Analytical models; Circuit simulation; Computational modeling; Computer simulation; Electrons; Lattices; MOSFET circuits; Performance analysis; Predictive models; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568047

Filename

568047