• DocumentCode
    1418005
  • Title

    Separating the influences of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT´s

  • Author

    Hamel, J.S.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    44
  • Issue
    5
  • fYear
    1997
  • fDate
    5/1/1997 12:00:00 AM
  • Firstpage
    901
  • Lastpage
    903
  • Abstract
    A simple experimental procedure is proposed to determine the separate ranges of reverse collector-base bias where neutral base recombination and avalanche breakdown, respectively, dominate base current reduction in silicon germanium heterojunction bipolar transistors (SiGe HBTs) which exhibit significant neutral base recombination
  • Keywords
    Ge-Si alloys; avalanche breakdown; electron-hole recombination; heterojunction bipolar transistors; semiconductor materials; HBT; SiGe; avalanche breakdown; base current reduction; neutral base recombination; reverse collector-base bias; Analog circuits; Avalanche breakdown; Breakdown voltage; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Photonic band gap; Silicon germanium; Space charge;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.568056
  • Filename
    568056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1418005