K alpha -band MMIC receiver with ion-implanted technology for high-volume and low-cost application

Author

Mondal, J. ; Geddes, J. ; Detry, J. ; Carlson, D.

Author_Institution

SCR Honeywell, Bloomington, MN, USA

Volume

1

Issue

10

fYear

1991

Firstpage

278

Lastpage

281

Abstract

A monolithic-microwave-integrated-circuit (MMIC) receiver in ion implantation technology, with LNA and mixer integrated circuits (ICs) shows 4.7 dB noise figure and 6.8 dB conversion gain at 35 GHz with a low IF frequency of 10-50 MHz. The data reported are for a receiver in the K alpha -band. The results are for two separate amplifier and mixer ICs combined to form a receiver or downconverter. The authors have successfully demonstrated viable and manufacturable technology that is useful for high volume and cost-effective applications. The measured results show the technology is able to deliver high performance with very good yield.<>

Keywords

MMIC; frequency convertors; ion implantation; microwave amplifiers; mixers (circuits); radar receivers; 35 GHz; 4.7 dB; 6.8 dB; EHF; FMCW radar; K alpha -band; LNA; MM-wave IC; MMIC receiver; conversion gain; downconverter; high volume application; integrated circuits; ion-implanted technology; low noise amplifier; low-cost application; manufacturable technology; mixer; monolithic-microwave-integrated-circuit; Frequency conversion; Gain; Integrated circuit noise; Integrated circuit technology; Ion implantation; MMICs; Manufacturing; Mixers; Monolithic integrated circuits; Noise figure;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.89095

Filename

89095