Optical modulation technique for carrier lifetime measurement in semiconductor lasers

Author

Paoletti ; Meliga, M. ; Montrosset, I.

Author_Institution

Centro Studi e Lab. Telecommun. SpA, Torino, Italy

Volume

8

Issue

11

fYear

1996

Firstpage

1447

Lastpage

1449

Abstract

We propose a new accurate method for differential carrier lifetime measurement, in which the laser under test biased below threshold is optically modulated. Experimental results are very reproducible and show very high signal-to-noise ratio, allowing also direct measurements of carrier density and transparency carrier density N/sub 0/. No additional technological process for the laser under test are required.

Keywords

carrier density; carrier lifetime; electro-optical modulation; laser noise; optical testing; semiconductor device testing; semiconductor lasers; biased below threshold; carrier density; carrier lifetime measurement; differential carrier lifetime measurement; direct measurement; high signal-to-noise ratio; laser under test; optical modulation technique; optically modulated; semiconductor lasers; transparency carrier density; Charge carrier density; Charge carrier lifetime; Current measurement; Frequency measurement; Intensity modulation; Life testing; Optical modulation; Optical pumping; Semiconductor lasers; Signal to noise ratio;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.541545

Filename

541545