Modification of the Einstein equations of majority- and minority-carriers with band gap narrowing effect in n-type degenerate silicon with degenerate approximation and with non-parabolic energy bands

Author

Xiao, Zhi-Xiong ; Wei, Tong-Li

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

913

Lastpage

914

Abstract

A new idea is presented for a modification of Einstein equations of the majority- and minority-carriers with the band gap narrowing effect in an n-type degenerate and uniformly-doped silicon with degenerate approximation and with nonparabolic energy bands. It may imply that the Einstein equation may be one factor for the increase of the minority-carrier diffusion coefficient at high doping levels

Keywords

carrier density; carrier mobility; degenerate semiconductors; elemental semiconductors; energy gap; heavily doped semiconductors; minority carriers; silicon; Einstein equations; band gap narrowing effect; degenerate approximation; high doping levels; majority carriers; minority carriers; minority-carrier diffusion coefficient; n-type degenerate Si; nonparabolic energy bands; uniformly-doped Si; Charge carrier processes; Electron mobility; Energy states; Equations; Microelectronics; Photonic band gap; Semiconductor device doping; Semiconductor materials; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568061

Filename

568061