Stability Analysis of an SiGe HBT-Based Active Cold Load

Author

De la Jarrige, Emilie Leynia ; Escotte, Laurent ; Gonneau, Eric ; Goutoule, Jean-Marc

Author_Institution

Lab. d´´Analyse et d´´Archit. des Syst., Univ. of Toulouse, Toulouse, France

Volume

59

Issue

2

fYear

2011

Firstpage

354

Lastpage

359

Abstract

In this study, we report the results of short- and intermediate-term stability at L-band of an active cold load (ACL) realized with an SiGe heterojunction bipolar transistor. A noise injection radiometer has been developed to perform the measurements. A noise-equivalent delta temperature of less than 40 mK and a stability estimated to 30 mK during 90 s were obtained from Allan variance analysis. The results indicate that the variations of the ACL noise temperature correspond to the sensitivity of the measurement system. No drift was detected over one week of continuous characterization indicating that this kind of active load is very stable.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; measurement systems; Allan variance analysis; HBT-based active cold load; SiGe; heterojunction bipolar transistor; measurement system; noise injection radiometer; noise-equivalent delta temperature; stability analysis; time 90 s; Active cold load (ACL); SiGe heterojunction bipolar transistor (HBT); noise temperature; radiometer; stability;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2095877

Filename

5680625