Monte Carlo modeling of femtosecond relaxation processes in AlGaAs/GaAs quantum wells

Author

Stanton, Christopher J. ; Bailey, Daniel W. ; Hess, Karl

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

24

Issue

8

fYear

1988

Firstpage

1614

Lastpage

1627

Abstract

Results are presented from Monte Carlo simulations of the femtosecond relaxation of photoexcited electrons in AlGaAs/GaAs quantum wells. Two experiments are simulated: in one electrons are initially excited at high energies far from equilibrium, and in other electrons are excited at low energies close to the bottom of the band. The effects of electron-electron, polar optical phonon, and intervalley deformation potential scattering are studied. For comparison, subpicosecond relaxation in bulk GaAs is also discussed.<>

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; photoconductivity; semiconductor junctions; AlGaAs-GaAs quantum wells; III-V semiconductors; Monte Carlo simulations; electron-electron scattering; femtosecond relaxation processes; intervalley deformation potential scattering; photoexcited electrons; polar optical phonon scattering; Circuits; Electrons; Gallium arsenide; High speed optical techniques; Monte Carlo methods; Optical scattering; Particle scattering; Spectroscopy; Ultrafast electronics; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.7092

Filename

7092