• DocumentCode
    141911
  • Title

    Exploiting error-correcting codes for cache minimum supply voltage reduction while maintaining coverage for radiation-induced soft errors

  • Author

    Park, Ae-Soon ; Narayanan, Vijaykrishnan ; Bowman, Keith ; Atallah, Francois ; Artieri, Alain ; Sei Seung Yoon ; Yuen, Kendrick ; Hansquine, David

  • Author_Institution
    Qualcomm, San Diego, CA, USA
  • fYear
    2014
  • fDate
    15-17 Sept. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Models for cache yield and coverage for radiation-induced soft errors quantify the trade-off between the minimum supply voltage (VMIN) and the soft-error protection when applying error-correcting codes (ECC) to a cache. Model predictions of the VMIN benefit and soft-error coverage agree closely with silicon measurements from a 7Mb data cache in a 20nm test chip when considering either single-error correction, double-error detection (SECDED) or double-error correction, triple-error detection (DECTED) codes. Silicon measurements demonstrate a VMIN reduction of 19% and 27% from SECDED and DECTED, respectively, as compared to a cache without ECC. Moreover, silicon measurements highlight a salient insight in that only 0.12% of the cache words contain an error when operating at the cache VMIN with SECDED. Thus, SECDED simultaneously enables a 19% lower VMIN and 99.88% coverage for radiation-induced soft errors. Model projections indicate larger benefits in VMIN and soft-error protection as future cache sizes increase.
  • Keywords
    cache storage; error correction codes; error detection codes; radiation hardening (electronics); silicon; DECTED codes; ECC; SECDED codes; Si; cache minimum supply voltage reduction; data cache; double-error correction codes; double-error detection codes; error-correcting codes; radiation-induced soft errors; silicon measurements; single-error correction codes; size 20 nm; soft-error protection; storage capacity 7 Mbit; triple-error detection codes; Data models; Error correction codes; Integrated circuit modeling; Measurement uncertainty; Random access memory; Semiconductor device measurement; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • DOI
    10.1109/CICC.2014.6946033
  • Filename
    6946033